Santa Clara, Calif. — IXYS Corp. has released a new generation of fast 300-V insulated gate bipolar transistors (IGBTs) built with the IXYS HDMOS IGBT process. The five new products — the IXGH42N30C3, ...
Infineon Technologies AG released the next generation of thin wafer IGBT by introducing Trenchstop™ 5. It features significantly lower conduction and switching losses compared to currently leading ...
(Image courtesy of Elsevier Publishing). Who else would you want to author a book about the IGBT (insulated gate bipolar transistor) than its inventor, Dr. B. Jayant Baliga? This invention is widely ...
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